Japanese
Elpida and US Intermolecular are expected to expand the existing collaborative
development program, according to a November 3, 2010 report by the EE Times. It
is reported that the following supports are included in the updated program,
manufacturing process integration in the 30- to 40-nm nodes, more advanced
materials, and process and integration development for DRAM (Dynamic Random
Access Memory) technologies between 20- and 30-nm.
The
collaborative development program and a licensing agreement were announced in
July 2008 by Elpida and Intermolecular. It is reported that Elpida has been
leveraging the R&D services provided by Intermolecular for next-generation
DRAM developments ever since.